Paper
9 September 1994 Thermochromism of metal-doped VO2 films deposited by dual-target sputtering
Ping Jin, Masato Tazawa, Kazuki Yoshimura, Takeshi Miki, K. Igarashi, Sakae Tanemura
Author Affiliations +
Proceedings Volume 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII; (1994) https://doi.org/10.1117/12.185384
Event: Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, 1994, Freiburg, Germany
Abstract
Thermochromic VO2 films were prepared by reactive magnetron sputtering under various conditions of substrate temperature, total sputter pressure and oxygen flow ratio and characterized by XRD, RBS, AFM and spectrophotometry. Films with VO2 single phase were formed from a fairly low substrate temperature of 300 degree(s)C by precisely controlling the oxygen flow ratio. The use of vanadium-nucleated substrates significantly improved the crystallinity of VO2. Tungsten doped V1-xWxO2 films with x equals 0 approximately 0.26 were formed by dual-target sputtering and the thermochromism of films was evaluated. The tungsten doping linearly hysteresis loop width.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ping Jin, Masato Tazawa, Kazuki Yoshimura, Takeshi Miki, K. Igarashi, and Sakae Tanemura "Thermochromism of metal-doped VO2 films deposited by dual-target sputtering", Proc. SPIE 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, (9 September 1994); https://doi.org/10.1117/12.185384
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KEYWORDS
Oxygen

Tungsten

Crystals

Sputter deposition

Doping

Transmittance

Silicon

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