Measurement and analysis of scatter from silicon wafers

John C. Stover; Marvin L. Bernt; Eugene L. Church; Peter Z. Takacs

doi:10.1117/12.189215

7 October 1994 Measurement and analysis of scatter from silicon wafers

John C. Stover, Marvin L. Bernt, Eugene L. Church, Peter Z. Takacs

Proceedings Volume 2260, Stray Radiation in Optical Systems III; (1994) https://doi.org/10.1117/12.189215
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

The measurement of wafer surface roughness has become of increasing interest in the semiconductor industry in the last year. This interest is driven by the need to reduce background `haze' associated with laser scanning particle counters, by the ever decreasing linewidth requirements and by a recent report that gate oxide breakdown voltage decreases as roughness increases. Scatter measurement offers the potential of being a fast, non-contact method of monitoring roughness; however, the ability to accurately calculate wafer roughness via scatter depends on various wafer surface characteristics. The paper presents data taken on a number of wafers and demonstrates that bare silicon scatters almost exclusively from surface topography and is isotropic over an appropriate spatial bandwidth, thus facilitating scatter measurement. Because silicon proved to be an excellent source of topographic scatter, an experiment was undertaken to compare the one dimensional roughness measurements made with an optical profilometer to the two dimensional (area) measurements made via scatter, and these results are also reported.

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John C. Stover, Marvin L. Bernt, Eugene L. Church, and Peter Z. Takacs "Measurement and analysis of scatter from silicon wafers", Proc. SPIE 2260, Stray Radiation in Optical Systems III, (7 October 1994); https://doi.org/10.1117/12.189215

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