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A metal-insulator-semiconductor device, Auger spectroscopy and infrared absorption spectrum have been used to study the impurities in phosphorosilicate glass (sio2/SPG/sio2)/InSb. The hydroxyl ions which caused current leakage during high vacuum outgassing were investigated. The current leakage mechanism in InSb p/n diodes have been discussed. The reasons for hydroxyl ions remaining in the passivation films were mentioned.
Hongyi Su andWeiguo Sun
"Effect of the OH ions on SiO2/SPG/SiO2/InSb device stability", Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); https://doi.org/10.1117/12.189244
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Hongyi Su, Weiguo Sun, "Effect of the OH ions on SiO2/SPG/SiO2/InSb device stability," Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); https://doi.org/10.1117/12.189244