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7 October 1994 Si1-xGex/Si heterojunction internal photoemission long-wavelength infrared detector
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Long wavelength Si1-xGex/Si heterojunction internal photoemission (HIP) infrared detectors have been successfully demonstrated utilizing the growth of degenerately boron doped Si1-xGex layers on Si. Recently, Si0.7Ge0.3/Si HIP detectors with either a Si1-xGex single layer or a Si1-xGex/Si multi-layer have been demonstrated with cutoff wavelengths out to 23 micrometers . Near-ideal thermionic emission dark current characteristics were measured and the electrical potential barriers were determined by the Richardson plot. A photoresponse model, similar to the modified Fowler Equation has been developed for the Si1-xGex/Si HIP infrared detector at wavelengths corresponding to photon energies less than the Fermi energy. The optical potential barriers, the corresponding cutoff wavelengths, and the emission coefficients, C1, for the HIP detectors have been determined from the measured spectral responses using the photoresponse model. Similar optical and thermal potential barriers were obtained.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
True Lon Lin, Jin Suk Park, Sarath D. Gunapala, Eric W. Jones, and Hector M. Del Castillo "Si1-xGex/Si heterojunction internal photoemission long-wavelength infrared detector", Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994);

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