Si1-xGex/Si heterojunction internal photoemission long-wavelength infrared detector

True Lon Lin; Jin Suk Park; Sarath D. Gunapala; Eric W. Jones; Hector M. Del Castillo

doi:10.1117/12.189245

Translator Disclaimer

7 October 1994 Si_1-xGe_x/Si heterojunction internal photoemission long-wavelength infrared detector

True Lon Lin, Jin Suk Park, Sarath D. Gunapala, Eric W. Jones, Hector M. Del Castillo

Author Affiliations +

Proceedings Volume 2274, Infrared Detectors: State of the Art II; (1994) https://doi.org/10.1117/12.189245
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

Long wavelength Si_1-xGe_x/Si heterojunction internal photoemission (HIP) infrared detectors have been successfully demonstrated utilizing the growth of degenerately boron doped Si_1-xGe_x layers on Si. Recently, Si_0.7Ge_0.3/Si HIP detectors with either a Si_1-xGe_x single layer or a Si_1-xGe_x/Si multi-layer have been demonstrated with cutoff wavelengths out to 23 micrometers . Near-ideal thermionic emission dark current characteristics were measured and the electrical potential barriers were determined by the Richardson plot. A photoresponse model, similar to the modified Fowler Equation has been developed for the Si_1-xGe_x/Si HIP infrared detector at wavelengths corresponding to photon energies less than the Fermi energy. The optical potential barriers, the corresponding cutoff wavelengths, and the emission coefficients, C₁, for the HIP detectors have been determined from the measured spectral responses using the photoresponse model. Similar optical and thermal potential barriers were obtained.

Citation Download Citation

True Lon Lin, Jin Suk Park, Sarath D. Gunapala, Eric W. Jones, and Hector M. Del Castillo "Si_1-xGe_x/Si heterojunction internal photoemission long-wavelength infrared detector", Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); https://doi.org/10.1117/12.189245

ACCESS THE FULL ARTICLE