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12 July 1994 Delta-doped CCDs for enhanced UV performance
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Abstract
Thin, backside-illuminated CCDs are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100% internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully processed commercial CCD die in which 30% of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months. Reduction of the reflectivity of the Si surface by deposition of HfO2 on the CCD back surface further increased the QE, with measured QE over 80% in some regions of the spectrum. We discuss these results as well as the delta-doped CCD concept and process.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shouleh Nikzad, Michael E. Hoenk, Paula J. Grunthaner, Robert W. Terhune, Frank J. Grunthaner, Rusty Winzenread, Masoud M. Fattahi, and Hsin-Fu Tseng "Delta-doped CCDs for enhanced UV performance", Proc. SPIE 2278, X-Ray and UV Detectors, (12 July 1994); https://doi.org/10.1117/12.180023
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