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14 September 1994 Silicon photodiodes with integrated thin-film filters for selective bandpasses in the extreme ultraviolet
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Silicon photodiodes which operate satisfactorily in the extreme ultraviolet (EUV) have been commercially available for the past few years. These photodiodes also inherently respond to radiation extending from the x-ray region to the near infrared, a property which is undesirable in many EUV applications. The addition of a thin film of a suitable filtering material to the surface of such a photodiode can accomplish the restriction of the sensitivity of the silicon to a much narrower band, or bands, in the EUV. This results in a rugged, yet sensitive photometer for applications in which dominant out-of-band radiation is present. Applications include plasma diagnostics, solar physics, x-ray lithography, x-ray microscopy, and materials science. Previous attempts to produce such devices have resulted in degraded shunt resistance with a corresponding increase in background noise. Prototype detectors have now been fabricated using directly deposited films of aluminum, aluminum/carbon, aluminum/carbon/scandium, silver, tin, and titanium, without degradation of the noise characteristics of the uncoated photodiodes. Measured and theoretical sensitivity data are presented, as well as a discussion of relatively simple methods to reduce the x-ray response of such filtered detectors.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Randall Canfield, Robert E. Vest, Thomas N. Woods, and Raj S. Korde "Silicon photodiodes with integrated thin-film filters for selective bandpasses in the extreme ultraviolet", Proc. SPIE 2282, Ultraviolet Technology V, (14 September 1994);

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