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3 October 1994 Power and length requirements for all-optical switching in semiconductor-doped glass waveguides
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Abstract
We present a theoretical model that computes the nonlinear index (n2) of semiconductor- doped glasses (SDG), based on the material's properties, and predicts the power and length requirements, as well as the optimum operating wavelengths, for an all-optical SDG waveguide switch. The main conclusions are that (1) n2 depends strongly on pump intensity, which partly explains the large disparity in reported values of n2, (2) the pump and signal wavelengths should be in specific and different ranges to minimize switching power and signal loss, (3) for CdSSe- and CdTe-doped glasses, n2 is relatively small, and the switching power requirement for these two SDGs is consequently quite high (2 - 16 W). We provide evidence that this weak nonlinearity, compared to that of similar semiconductors in bulk, is due to the strong nonradiative recombination of carriers arising from the small size of the semiconductor microcrystallites. Projections indicate that the switching power would be reduced by up to three orders of magnitude by increasing the microcrystallite size, thus producing a slower (ns) but more power-efficient switch.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Derek T. Mayweather, Michel J. F. Digonnet, Richard H. Pantell, and H. John Shaw "Power and length requirements for all-optical switching in semiconductor-doped glass waveguides", Proc. SPIE 2289, Doped Fiber Devices and Systems, (3 October 1994); https://doi.org/10.1117/12.188703
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