Photoionization investigation of defect traps in mercuric iodide room-temperature x-ray spectrometers

John M. Van Scyoc III; T. S. Gilbert; Tuviah E. Schlesinger; Ralph B. James

doi:10.1117/12.187269

21 September 1994 Photoionization investigation of defect traps in mercuric iodide room-temperature x-ray spectrometers

John M. Van Scyoc III, T. S. Gilbert, Tuviah E. Schlesinger, Ralph B. James

Proceedings Volume 2305, Gamma-Ray Detector Physics and Applications; (1994) https://doi.org/10.1117/12.187269
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

Impurities in mercuric iodide (HgI₂) x-ray spectrometers are investigated by photoionization (PI) spectroscopy. The observed spectrum is shown to be a function of the particular impurities present in the material both in as-grown material and in material intentionally doped with Cu and Ag. The effect of contaminants on detector performance is also explicitly demonstrated as is the need for high purity starting materials and carefully controlled processing conditions.

Citation Download Citation

John M. Van Scyoc III, T. S. Gilbert, Tuviah E. Schlesinger, and Ralph B. James "Photoionization investigation of defect traps in mercuric iodide room-temperature x-ray spectrometers", Proc. SPIE 2305, Gamma-Ray Detector Physics and Applications, (21 September 1994); https://doi.org/10.1117/12.187269

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