Paper
5 August 1994 Characterization of CdS-CdS1-xSex strained layer superlattices by photoluminescence measurements
Youming Lu, Baojun Yang, Z. P. Guan, Lian Chun Chen, Ai Hui Yang, W. S. Li, Xiwu Fan
Author Affiliations +
Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182177
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China
Abstract
CdS-CdS1-xSex SLSs were grown on (111) GaAs substrates by MOCVD, and their characteristics were analyzed by PL measurements. Luminescence results show that the band-gap of superlattice can be controlled by changing compositions, and crystalline quality of SLSs can be improved by controlling composition and inducing buffer layer. This indicates that the PL spectrum is more sensitive to investigate the structure of SLSs.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Youming Lu, Baojun Yang, Z. P. Guan, Lian Chun Chen, Ai Hui Yang, W. S. Li, and Xiwu Fan "Characterization of CdS-CdS1-xSex strained layer superlattices by photoluminescence measurements", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); https://doi.org/10.1117/12.182177
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