Electric field effect on exciton emission in the photoluminescence from the ZnCdSe-ZnSe superlattices

Jiying Zhang; Xiwu Fan; Baojun Yang; De Zen Shen; Zhuhong Zheng

doi:10.1117/12.182065

5 August 1994 Electric field effect on exciton emission in the photoluminescence from the ZnCdSe-ZnSe superlattices

Jiying Zhang, Xiwu Fan, Baojun Yang, De Zen Shen, Zhuhong Zheng

Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182065
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China

Abstract

Photoluminescence (PL) measurement of ZnCdSe-ZnSe strained layer superlattices structures subjected to an electric field has been performed. As well as the shifts of the PL energy, the main peak, due to the exciton emission was shifted to the lower energy side with increasing electric field. The reason is related to the field-induced electron-hole separation in the ZnCdSe well.

Citation Download Citation

Jiying Zhang, Xiwu Fan, Baojun Yang, De Zen Shen, and Zhuhong Zheng "Electric field effect on exciton emission in the photoluminescence from the ZnCdSe-ZnSe superlattices", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); https://doi.org/10.1117/12.182065

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