Optical endpoint detection of plasma etching and RIE for LSI circuits

Baoyong Mi; Kefei Song; De-Fu Hao; Qingying Zhang

doi:10.1117/12.182173

5 August 1994 Optical endpoint detection of plasma etching and RIE for LSI circuits

Baoyong Mi, Kefei Song, De-Fu Hao, Qingying Zhang

Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182173
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China

Abstract

This paper describes briefly importance of endpoint detection of the plasma etching and reactive-ion etching for LSI and VLSI circuits. The monitoring principle, design ideal and construction of the instrument for endpoint monitoring are described in the paper and monitoring results on line have been given. Finally the paper will discuss the load effect of the plasma etching and laser lateral interference influenced on monitor precision.

Citation Download Citation

Baoyong Mi, Kefei Song, De-Fu Hao, and Qingying Zhang "Optical endpoint detection of plasma etching and RIE for LSI circuits", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); https://doi.org/10.1117/12.182173

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