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7 December 1994 Initial results for a PBS replacement resist
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Abstract
The level of difficulty associated with producing leading edge integrated circuits continues to increase with every design iteration. As we move beyond the 16 mB barrier the photomask manufacturers will encounter some unique challenges. Reticles for future generations of products will require sub-resolution features to be printed on the reticle in order to aid in resolving minimum features on the order of 0.35 micrometers and below at the wafer plane. This will place renewed emphasis on both resolution and feature size linearity for the maskmakers. An alternative resist to PBS would be helpful in meeting these challenges. Although PBS has good capabilities in the areas of resolution and feature size linearity there have always been inherent difficulties in processing it. It does not have good dry etch resistance and the develop process is solvent based which causes problems with swelling. Conversely, the novolak based resists are usually characterized by good resistance to dry etching environments and aqueous based develop processes. This paper investigates a novolak based resist that was specifically formulated for photomask manufacturing by IBM but has not been commercially available until recently.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Barry Rockwell, Wolfgang Staud, and Larry J. Watson "Initial results for a PBS replacement resist", Proc. SPIE 2322, 14th Annual BACUS Symposium on Photomask Technology and Management, (7 December 1994); https://doi.org/10.1117/12.195808
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