Paper
12 December 1994 Preparation and optical properties of porous silicon
V. A. Karavanskii, Anton P. Maslov
Author Affiliations +
Proceedings Volume 2332, Second International Symposium on Advanced Laser Technologies; (1994) https://doi.org/10.1117/12.195880
Event: Advanced Laser Technologies: International Symposium, 1993, Prague, Czech Republic
Abstract
We have conducted an extensive experimental investigations of optical properties of porous silicon with special emphasis to their dependence upon the microstructure of the material. We present the results of direct STM observation of `quantum wires' in porous silicon and time- resolved optical spectrum of nonlinear transmittance, featuring sharp peaks which can be attributed to the saturation of the optical transition between spatially quantized levels of carriers in `quantum wires'. It was found that porous silicon is strongly nonlinear optical material with Im(chi) (3) approximately equals 10-8 esu.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. A. Karavanskii and Anton P. Maslov "Preparation and optical properties of porous silicon", Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); https://doi.org/10.1117/12.195880
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KEYWORDS
Picosecond phenomena

Silicon

Quantum wells

Luminescence

Absorption

Optical properties

Raman spectroscopy

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