You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
14 September 1994Emission local testing of mechanical stresses in surface layer of silicon
Mechanical stresses change energy gap in semiconductors. Thus, a photoelectric work function is dependent on this effect. In such a view surface layers elastic deformations are recorded by measuring of photoelectron emission quantum yield.
The alert did not successfully save. Please try again later.
A. Balodis, Yuri Dekhtyar, G. Sagalovich, "Emission local testing of mechanical stresses in surface layer of silicon," Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186754