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14 September 1994 Emission local testing of mechanical stresses in surface layer of silicon
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Abstract
Mechanical stresses change energy gap in semiconductors. Thus, a photoelectric work function is dependent on this effect. In such a view surface layers elastic deformations are recorded by measuring of photoelectron emission quantum yield.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Balodis, Yuri Dekhtyar, and G. Sagalovich "Emission local testing of mechanical stresses in surface layer of silicon", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186754
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