New hot-carrier-resistant P-I-N MOSFET structure

Le-Tien Jung; Indrajit Manna; Swapan Bhattacharya; Sanjay K. Banerjee

doi:10.1117/12.186061

9 September 1994 New hot-carrier-resistant P-I-N MOSFET structure

Le-Tien Jung, Indrajit Manna, Swapan Bhattacharya, Sanjay K. Banerjee

Proceedings Volume 2335, Microelectronics Technology and Process Integration; (1994) https://doi.org/10.1117/12.186061
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

A new P-I-N MOSFET structure has been developed with near-intrinsic doping (10¹⁵ - 10¹⁶ cm^-3 in our case) in the channel near the source/drain regions. The new structure is more effective in reducing the peak electric field at the channel/drain junction than LDD structures, and hence results in better hot carrier suppression. Also, the near intrinsic region near the drain reduces the transverse electric field and gives rise to higher carrier mobility and drive current than LDD devices.

Citation Download Citation

Le-Tien Jung, Indrajit Manna, Swapan Bhattacharya, and Sanjay K. Banerjee "New hot-carrier-resistant P-I-N MOSFET structure", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186061

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