New route to thermal dry-etching of copper using hydrogen peroside (H2O2) and hexafluoroacetylacetone (HFACH)

Ajay Jain; Toivo T. Kodas; Mark J. Hampden-Smith

doi:10.1117/12.186073

9 September 1994 New route to thermal dry-etching of copper using hydrogen peroside (H₂O₂) and hexafluoroacetylacetone (HFACH)

Ajay Jain, Toivo T. Kodas, Mark J. Hampden-Smith

Author Affiliations +

Proceedings Volume 2335, Microelectronics Technology and Process Integration; (1994) https://doi.org/10.1117/12.186073
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Here we report a new thermal dry etch process for copper using hydrogen peroxide (H₂O₂) and hexafluoroacetylacetone (hfacH). The H₂O₂ oxidizes copper to form either copper(I)oxide or copper(II)oxide depending on the etch temperature followed by removal of the copper oxide by hfacH resulting in formation of volatile copper(bis- hexafluoroacetylacetonate) [Cu(hfac)₂] etch species and water. Copper has been successfully etched by this process at temperatures as low as 150 degree(s)C and etch rates of up to approximately micrometers /min at 190 degree(s)C.

Citation Download Citation

Ajay Jain, Toivo T. Kodas, and Mark J. Hampden-Smith "New route to thermal dry-etching of copper using hydrogen peroside (H₂O₂) and hexafluoroacetylacetone (HFACH)", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186073

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