Surface charge effects in silicon wafer cleaning using surfactant-containing solutions

Joong-Suck Jeon; Srini Raghavan; John K. Lowell; Valerie Wenner

doi:10.1117/12.186646

14 September 1994 Surface charge effects in silicon wafer cleaning using surfactant-containing solutions

Joong-Suck Jeon, Srini Raghavan, John K. Lowell, Valerie Wenner

Proceedings Volume 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing; (1994) https://doi.org/10.1117/12.186646
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

The adsorption of an anionic and a cationic surfactant onto a silicon surface was investigated using the technique of ATR (Attenuated Total Reflection) FT-IR at pH values of 2.5 and 9.5. The surface charge development on silicon samples conditioned in these surfactant solutions was investigated using a SPV (Surface Photovoltage) technique. The adsorption of DTAB was found to be much higher at pH equals 9.5 than at pH equals 2.5. In contrast, adsorption of SDS was independent of pH. The surface charge of HF-last cleaned silicon p(100) wafers was almost the same as that of the as-received wafer. After conditioning in surfactant solutions, negatively charged silicon wafers showed an excess of positive charge except of silicon wafers conditioned in DTAB solution at pH equals 9.5. After a DI water rinsing step, the surface charge was returned to its original value.

Citation Download Citation

Joong-Suck Jeon, Srini Raghavan, John K. Lowell, and Valerie Wenner "Surface charge effects in silicon wafer cleaning using surfactant-containing solutions", Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); https://doi.org/10.1117/12.186646

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