Paper
12 October 1994 Sn-Sb-Se phase-change media for high-density write-once optical disk
Tetsuya Nishida, Hisataka Sugiyama, Shinkichi Horigome
Author Affiliations +
Proceedings Volume 2338, 1994 Topical Meeting on Optical Data Storage; (1994) https://doi.org/10.1117/12.190172
Event: Optical Data Storage '94, 1994, Dana Point, CA, United States
Abstract
We have developed Sn-Sb-Se/Sb-Bi bi-layer phase-change media for high- density write-once optical disks. Crystallized marks as small as 0.5 micrometers are stably recorded without initialization. These phase-change media, compared to ablative type write-once media, have high carrier-to- noise ratio, low jitter, and long life. Mark-edge recording with multi- pulse laser irradiation on the media provides a linear bit density of 0.48 micrometers /bit and track pitch of 1.2 micrometers using a 690-nm-wavelength laser diode and 0.55 NA objective lens. This corresponds to 1.1 Gbit/in.2, or 14 GB formatted data capacity per both sides for a 12- inch-diameter disk with a zoned CAV format.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tetsuya Nishida, Hisataka Sugiyama, and Shinkichi Horigome "Sn-Sb-Se phase-change media for high-density write-once optical disk", Proc. SPIE 2338, 1994 Topical Meeting on Optical Data Storage, (12 October 1994); https://doi.org/10.1117/12.190172
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KEYWORDS
Reflectivity

Crystals

Laser crystals

Optical discs

Semiconductor lasers

Optical storage

Objectives

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