You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
12 October 1994Stability of phase-change optical disks produced by a pass-through type sputtering system
Mass production technology of phase-change rewritable disks can be achieved by using a pass-through type in-line sputtering system. The qualities of the mass-produced PCR disk were high enough to satisfy all the specifications for this product. We optimized the composition of the recording layer (SbTeGe alloy) of the PCR disk. It was found that a Ge content of more than 20 at% in the recording layer is necessary to achieve a long archival life. The mass-produced PCR disks were very stable in the accelerated aging test. The BER stayed at nearly the same value for 2000 hrs at 90 degree(s)C, 80% RH and 4000 hrs at 80 degree(s)C, 80% RH. The life of the PCR disks was estimated to be greater than 50 years at 30 degree(s)C, 80% RH. The activation energy for the PCR disks obtained from Arrhenius plots was 1.11 eV.
The alert did not successfully save. Please try again later.
Masaru Suzuki, Noriharu Morishita, Shun-ichi Tajima, Masafumi Nakao, Kazuhiro Nishimura, Miyoko Ohta, "Stability of phase-change optical disks produced by a pass-through type sputtering system," Proc. SPIE 2338, 1994 Topical Meeting on Optical Data Storage, (12 October 1994); https://doi.org/10.1117/12.190186