Paper
4 January 1995 Electromagnetic wave interaction with laser-induced plasmas in GaAs
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Proceedings Volume 2343, Optically Activated Switching IV; (1995) https://doi.org/10.1117/12.198649
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States
Abstract
A multigigahertz microwave signal was generated and up-converted in a GaAs substrate coplanar strip line. Two 630-nm-wavelength laser pulses-one with a normal wavefront, another with a titled wavefront- were respectively used to generate and frequency up-convert the signal. The relativistic plasma front, induced by the tilted optical wavefront, frequency up-shifts the counter-propagating electromagnetic wave via the Doppler effect. When the speed of the plasma front was about 0.4 times the speed of electromagnetic wave in the coplanar strip lines, the experiments showed that the fall time of a step signal decreased more than 30% after the reflection. Given the bandwidth limitations of the data acquisition system, it is possible that a factor of 2 increase was achieved. A transmission line model was employed to simulate this process. The simulation results were consistent with experimental observations. Using coplanar strip lines on a GaAs substrate for microwave signal compression device has the advantage of a high reflection coefficient, frequency tunability, small laser trigger energy, and all-solid-state construction, making this technique suitable for impulse radar applications.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liyue Mu, William R. Donaldson, Jeff C. Adams, and R. Aaron Falk "Electromagnetic wave interaction with laser-induced plasmas in GaAs", Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); https://doi.org/10.1117/12.198649
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Cited by 5 scholarly publications.
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KEYWORDS
Plasmas

Gallium arsenide

Microwave radiation

Ionization

Electromagnetic radiation

Wavefronts

Picosecond phenomena

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