Resonant tunneling structures to significantly reduce the voltage drop in contacting pZnSe layer in blue-green lasers: simulation of voltage-current behavior

Faquir C. Jain; M. Gokhale; R. LaComb; C. Chung; Wenli Huang

doi:10.1117/12.197257

21 December 1994 Resonant tunneling structures to significantly reduce the voltage drop in contacting pZnSe layer in blue-green lasers: simulation of voltage-current behavior

Faquir C. Jain, M. Gokhale, R. LaComb, C. Chung, Wenli Huang

Author Affiliations +

Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197257
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States

Abstract

This paper describes the usage of a novel asymmetric resonant tunneling structure (RTS) to obtain low voltage drop contacts to pZnSe and other wide energy gap semiconductors. Generally, the contact to p-ZnSe is achieved by the formation of a Schottky barrier or by forming a graded layer interface to pZnSe. These techniques have been employed in fabricating ZnSe based blue-green lasers, reported during the past few years using structures grown by Molecular Beam Epitaxy. Most of these approaches result in contact voltage drops ranging from 6-30 volts for a typical current above laser threshold. In the case of pGaAs-pZnSe (or pZnCdSe) interface, the presence of a large valence energy band offset results in high voltage drop due to a rectifying interface. The use of asymmetric resonant tunneling structure(s) at these heterointerfaces is shown to result in a significantly low (0.4 volts) voltage drops at current densities above threshold (approximately equals 600 A/Cm²). The incorporation of asymmetric resonant tunneling structures is also proposed for lasers on InP substrates. It is a generic technique which can be used for realizing low resistance contacts in material systems where standard contact techniques produce poor results. This technique is applicable for both p- and n-type heterojunction interfaces.

Citation Download Citation

Faquir C. Jain, M. Gokhale, R. LaComb, C. Chung, and Wenli Huang "Resonant tunneling structures to significantly reduce the voltage drop in contacting pZnSe layer in blue-green lasers: simulation of voltage-current behavior", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); https://doi.org/10.1117/12.197257

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