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26 October 1994 Heterojunction Fe:InP/InGaAs Schottky and MESFETs grown by MOCVD
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190774
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
Novel lattice-matched Fe:InP/InGaAs heterostructure MESFETs have been grown by metalorganic chemical vapor deposition (MOCVD). The resistivity of epitaxially grown Fe:InP layer typically exceeded 3 X 108 (Omega) cm. High transconductance of 140 mS/mm is obtained for a 1-micrometers gate length MESFET fabricated by depositing the gate metallization directly on the semi-insulating Fe:InP layer. High-frequency S-parameter measurements of microwave characteristics indicated a projected maximum frequency of oscillation fmax equals 18 GHz but transducer gain cutoff occurred at approximately 7.3 GHz because of impedance mismatch and package parasitic. The planar semi- insulating Fe:InP layer enhances the Schottky barrier height and results in devices with excellent performances.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. C. Shei, Yan-Kuin Su, C. J. Hwang, and Meiso Yokoyama "Heterojunction Fe:InP/InGaAs Schottky and MESFETs grown by MOCVD", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190774
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