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26 October 1994 High-quality InP epitaxial layers grown by metal-organic chemical vapor deposition using tertiarybutylphosphine (TBP) source
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190773
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Abstract
One organophosphrous compound, tertiarybutylphosphine has been investigated for their possible use as precursors in the metalorganic chemical vapor deposition (MOCVD). This material is less pyrophoric and less toxic than phosphine, the compound has used to grow epitaxial layers of InP on semi-insulating InP substrate using trimethylindium (TMIn) in a flowing hydrogen ambient. High quality InP epilayer have been successfully grown and specular surface was obtained at growth temperature 600 degree(s)C and x-ray was used to measure the lattice mismatch (Delta) a/a. The highest quality InP epilayer, which was grown at a V/III ratio of 60 and a growth pressure of 250 Torr, the highest n-type electron Hall mobility were 4500 cm2/Vs with the electron concentration of 3.4 X 1015 cm-3 at 300 K and 18260 cm2/Vs with the electron concentration of 2.8 X 1015 cm-3 at 77 K. The low temperature (10 K) photoluminescence optical properties measurements show intense near bandgap emission with a full width half maximum (FWHM) is about 8 meV.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Kuan, Yan-Kuin Su, and W. J. Tzou "High-quality InP epitaxial layers grown by metal-organic chemical vapor deposition using tertiarybutylphosphine (TBP) source", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190773
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