High-resolution x-ray study of Ti/Fe interface with oxygen contamination

Tianqu Gu; Mark Sutton; Zhihua Yan; Robert Schulz

doi:10.1117/12.190766

26 October 1994 High-resolution x-ray study of Ti/Fe interface with oxygen contamination

Tianqu Gu, Mark Sutton, Zhihua Yan, Robert Schulz

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190766
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

Ti/Fe bilayers are deposited on SiO₂ substrate in ultra-high- vacuum environment (10^-9 Torr) in different sequence: SiO₂/Fe(200 angstrom)/Ti(300 angstrom) and SiO₂/Ti(300 angstrom)/Fe(200 angstrom). The interfaces of the films and their evolution at various annealing stages are studied by X-ray reflectivity measurements using high resolution triple-crystal X-ray diffractometer. The study shows that a different sequence of deposition results in different microstructure and affects subsequent evolution of the interfaces. It is also noticed that the annealed films are contaminated by the oxygen. Electron density profiles for the structures are obtained by nonlinear least square fits to the reflectivity curves.

Citation Download Citation

Tianqu Gu, Mark Sutton, Zhihua Yan, and Robert Schulz "High-resolution x-ray study of Ti/Fe interface with oxygen contamination", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190766

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