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26 October 1994 Interfaces in crystalline materials
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994)
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
A brief review of the theoretical state of the art in the field of semiconductor interfaces is presented. It is shown that the important factor controlling the different semiconductor barrier heights is the density of states associated with the semiconductor dangling-bonds. passivated semiconductor surfaces present saturated dangling-bonds and have modified barrier heights. Results for hydrogen-passivated GaAs (110)-surfaces are presented; it is shown that the Schottky-barrier height formed by the deposition of a K-layer is sustantially changed by the hydrogen-passivation.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Flores, R. Saiz-Pardo, and R. Rincon "Interfaces in crystalline materials", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994);

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