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26 October 1994 Study of GaSb Schottky contacts
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Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994)
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China
Various metals were evaporated on the n-GaSb epilayer grown by low pressure metal organic chemical vapor deposition (MOCVD) to form the Schottky contact. The barrier height is almost independent of the work function and is determined entirely by the doping and surface property of the semiconductor. These results are in good agreement with Bardeen model. The carrier transport of Pd/n-GaSb contacts was studied and analyzed to discuss the effect of doping level of GaSb epilayer on the barrier height of the contact.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yan-Kuin Su, H. Kuan, P. H. Chang, and ShuWoei Chiou "Study of GaSb Schottky contacts", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994);

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