LWIR p+-n photodiodes fabricated with HgCdTe bulk material

Jaroslaw Rutkowski; Antoni Rogalski

doi:10.1117/12.224982

16 October 1995 LWIR p+-n photodiodes fabricated with HgCdTe bulk material

Jaroslaw Rutkowski, Antoni Rogalski

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224982
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

P⁺-n long wavelength infrared radiation (LWIR) photodiodes were fabricated by arsenic diffusion into n-type HgCdTe bulk monocrystals. To improve the photodiode performance, a thickness of n-type base layer was limited. The photodiodes performance was determined from measurements of the current-voltage and spectral response characteristics. The generation-recombination current was found to be a dominant current around zero bias voltage at 77 K.

Citation Download Citation

Jaroslaw Rutkowski and Antoni Rogalski "LWIR p+-n photodiodes fabricated with HgCdTe bulk material", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224982

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