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17 April 1995 AlGaInP single quantum well laser diodes
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Abstract
The properties and low pressure organometallic vapor phase epitaxy of GaxIn$1-x)P/(AlGa)0.5In0.5P quantum well (QW) laser diode heterostructures with Al0.5In0.5P cladding layers, and having wavelength 614 < (lambda) < 754 nm, are described. At longer wavelengths ((lambda) > 660 nm), threshold current densities under 200 A/cm2 and efficiencies greater than 75% result form a biaxially- compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance is achieved with strained, single QW active regions. The wavelength range may also be expanded into the previously difficult 700-nm band, by including InGaAsP or AlGaAsP QWs.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David P. Bour, David W. Treat, K. J. Beernink, and Ross D. Bringans "AlGaInP single quantum well laser diodes", Proc. SPIE 2380, UV and Visible Lasers and Laser Crystal Growth, (17 April 1995); https://doi.org/10.1117/12.206954
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