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28 April 1995 Mid-infrared semiconductor lasers with GaInSb/InAs type-II superlattices
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Abstract
We demonstrate midwave infrared (MID-IR) diode lasers that span most of the 3 - 4 micrometers range. Laser active regions are multiple quantum well (MQW) structures with GaInSb/InAs, type-II, broken gap superlattices for the wells and GaInAsSb for the barriers. The superlattice constituents and dimensions were tailored to reduce losses from auger recombination. AlSb/InAs superlattices are used for both n-type and p-type laser cladding regions.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan R. Kost, David H. Chow, Tom C. Hasenberg, Richard H. Miles, and L. West "Mid-infrared semiconductor lasers with GaInSb/InAs type-II superlattices", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); https://doi.org/10.1117/12.208460
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