Paper
28 April 1995 New diode wavelengths for pumping solid state lasers
Jay A. Skidmore, Mark A. Emanuel, Raymond J. Beach, Barry L. Freitas, Nils W. Carlson, Christopher D. Marshall, William J. Benett, Richard W. Solarz, David P. Bour, David W. Treat
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Abstract
High-power laser-diode arrays have been demonstrated to be viable pump sources for solid- state lasers. The diode bars (fill factor of 0.7) were bonded to silicon microchannel heatsinks for high-average-power operation. Over 12 W of cw output power was achieved from a one cm AlGaInP tensile-strained single-quantum-well laser diode bar. At 690 nm, a compressively strained single-quantum-well laser-diode array produced 360 W/cm2 per emitting aperture under cw operation, and 2.85 kW of pulsed power from a 3.8 cm2 emitting- aperture array. InGaAs strained single-quantum-well laser diodes emitting at 900 nm produced 2.8 kW pulsed power from a 4.4 cm2 emitting-aperture array.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jay A. Skidmore, Mark A. Emanuel, Raymond J. Beach, Barry L. Freitas, Nils W. Carlson, Christopher D. Marshall, William J. Benett, Richard W. Solarz, David P. Bour, and David W. Treat "New diode wavelengths for pumping solid state lasers", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); https://doi.org/10.1117/12.208438
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Cited by 3 scholarly publications.
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KEYWORDS
Semiconductor lasers

Diodes

Heatsinks

Silicon

Continuous wave operation

Gallium arsenide

Solid state lasers

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