Characterization of semiconductor device structures using contactless electromodulation

Fred H. Pollak; Wojciech Krystek; M. Leibovitch; S. Moneger; Hao Qiang; Dong Yan

doi:10.1117/12.206858

24 April 1995 Characterization of semiconductor device structures using contactless electromodulation

Fred H. Pollak, Wojciech Krystek, M. Leibovitch, S. Moneger, Hao Qiang, Dong Yan

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206858
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

This paper reviews some recent developments in the use of the contactless, and hence nondestructive, electromodulation methods of photoreflectance and contactless electroreflectance for the room temperature characterization and qualification of semiconductor device structures. These include heterojunction bipolar transistors, pseudomorphic high electron mobility transistors, depletion and enhancement mode transistors, quantum well lasers, vertical cavity surface emitting lasers, multiple quantum well infrared detectors and solar cells.

Citation Download Citation

Fred H. Pollak, Wojciech Krystek, M. Leibovitch, S. Moneger, Hao Qiang, and Dong Yan "Characterization of semiconductor device structures using contactless electromodulation", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206858

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