Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction

Maya P. Mikhailova; Georgy G. Zegrya; Konstantin D. Moiseev; Ivan N. Timchenko; Igor A. Andreev; Yury P. Yakovlev

doi:10.1117/12.206866

24 April 1995 Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction

Maya P. Mikhailova, Georgy G. Zegrya, Konstantin D. Moiseev, Ivan N. Timchenko, Igor A. Andreev, Yury P. Yakovlev

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206866
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

First observation of electroluminescence in type II broken-gap p-GaInAsSb/p-InAs single heterojunctions is reported. Intensive spontaneous emission was obtained under applied bias at T equals 77 - 300 K. Two narrow `resonant' emission bands were observed in the spectral range 3 - 5 micrometers at T equals 77 K with full width at half maximum about 1 - 2 kT. It was established that effect of unusual electroluminescence in isotype type II broken-gap p-p- heterostructure due to indirect (tunnel) radiative recombination of spatial separated 2D- electrons and holes localized in deep adjacent quantum wells at different sides of the interface. Novel tuneable mid-infrared light sources are proposed.

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Maya P. Mikhailova, Georgy G. Zegrya, Konstantin D. Moiseev, Ivan N. Timchenko, Igor A. Andreev, and Yury P. Yakovlev "Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206866

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