Er-doped Si/SiO2 microcavities

E. Fred Schubert; J. M. Poate

doi:10.1117/12.206896

24 April 1995 Er-doped Si/SiO₂ microcavities

E. Fred Schubert, J. M. Poate

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206896
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

The optical characteristics and the recombination dynamics of Er-doped Si/SiO₂ planar microcavities are reviewed. We show that the emission characteristics of the optically excited Er³⁺ ions are significantly changed by microcavity effects. For emission-resonant microcavities, the intensity, spectral characteristics, far-field distribution, and spontaneous lifetime are changed. For absorption-resonant microcavities, the absorption efficiency of the 980 nm excitation is strongly enhanced. The results demonstrate that the employment of microcavities in optical as well as optoelectronic devices provides new possibilities to enhance the properties of photonic and optoelectronic devices.

Citation Download Citation

E. Fred Schubert and J. M. Poate "Er-doped Si/SiO₂ microcavities", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206896

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