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24 April 1995 Investigation of 0.8-μm InGaAsP-GaAs laser diodes with multiple quantum wells
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Abstract
In this paper, we studied the effects of the active region structure (one, two and three quantum wells with same total thickness) for high-power InGaAsP-GaAs separate confinement heterostructure lasers emitting at 0.8 micrometers wavelength. Experimental results for the lasers grown by low pressure metalorganic chemical vapor deposition show excellent agreement with the theoretical model. Total output power of 47 W from an uncoated 1 cm-wide laser bar was achieved in quasi-continuous wave operation.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jacqueline E. Diaz, Hyuk Jong Yi, Seongsin Kim, Matthew Erdtmann, Lewis S. Wang, Ivan Eliashevich, Erwan Bigan, and Manijeh Razeghi "Investigation of 0.8-μm InGaAsP-GaAs laser diodes with multiple quantum wells", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206931
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