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24 April 1995 Novel accurate measurement technique for carrier lifetime in 1.5-μm semiconductor laser
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Abstract
We propose a new accurate method for differential carrier lifetime measurement, in which the laser under test biased below threshold is optically modulated. Experimental results are very reproducible and show very high signal/noise ratio. No additional technological process for the laser under test are required.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marina Meliga, Roberto Paoletti, Marco Bello, Luca Cicchelli, and Ivo Montrosset "Novel accurate measurement technique for carrier lifetime in 1.5-μm semiconductor laser", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206929
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