Semiconductors of the future, and the future is now!

Max N. Yoder

doi:10.1117/12.206877

24 April 1995 Semiconductors of the future, and the future is now!

Max N. Yoder

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206877
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

The refractory or wide bandgap semiconductors are replacing gallium arsenide (GaAs) as the semiconductor of the future and they are doing it now. These semiconductors exhibit many unusual properties that are just now being exploited. Their exploitation is expected to engender many new device and electromagnetic systems concepts. Already transistors of these materials have exhibited the highest power densities of any RF transistor, transistor operation to 80 GHz, the first and the most efficient blue light emitting diodes, and negative electron affinity properties rendering them with ideal properties as cold cathodes. Among the most recently discovered of these properties is that of electron transport at energy levels (velocities) orders of magnitude greater than their bandgaps and--unlike conventional semiconductors--are seemingly not heavily scattered by optical phonons. This property is expected to lead not only to much higher frequency devices but to a new class of optical emitters as well.

Citation Download Citation

Max N. Yoder "Semiconductors of the future, and the future is now!", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206877

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