Simulation of the lateral photo effect in large-area 1D a-Si:H p-i-n thin-film position-sensitive detectors

Rodrigo Martins; Elvira Fortunato

doi:10.1117/12.206924

24 April 1995 Simulation of the lateral photo effect in large-area 1D a-Si:H p-i-n thin-film position-sensitive detectors

Rodrigo Martins, Elvira Fortunato

Author Affiliations +

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206924
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

Citation Download Citation

Rodrigo Martins and Elvira Fortunato "Simulation of the lateral photo effect in large-area 1D a-Si:H p-i-n thin-film position-sensitive detectors", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206924

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