Spatial microscopic/macroscopic control and modeling of the p.i.n devices stability

Alessandro Fantoni; Manuela Vieira; Rodrigo Martins

doi:10.1117/12.206917

24 April 1995 Spatial microscopic/macroscopic control and modeling of the p.i.n devices stability

Alessandro Fantoni, Manuela Vieira, Rodrigo Martins

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206917
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

The introduction into a traditional p.i.n. structure of two defective buffer layers near the p/i and i/n interfaces can improve the device stability and efficiency through an enhancement of the electric field profile at the interfaces and a reduction of the available recombination bulk centers. The defectous layer (`i-layer'), grown at a higher power density, present a high density of the defects and acts as `gettering centers' able to tailor light induced defects under degradation conditions. If the i-layer density of states remains below 10¹⁶ eV^-1 cm^-3 and assuming a Gaussian distribution of defect states, the gettering center distribution will not affect significantly the carrier population but only its spatial distribution. We report here about a device numerical simulation that allows us to analyze the influence of the `i-layer' position, thickness and density of states on the a-Si:H solar cells performances. Results of some systematic simulation rom the ASCA program (Amorphous Solar Cell Analysis), and for different configurations will be presented.

Citation Download Citation

Alessandro Fantoni, Manuela Vieira, and Rodrigo Martins "Spatial microscopic/macroscopic control and modeling of the p.i.n devices stability", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206917

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