Spin tracing: a tool of interface characterization in structures with semimagnetic semiconductors

Jan A. Gaj; P. Kossacki; Nguyen The Khoi; J. Cibert; W. Grieshaber; Y. Merle d'Aubigne; Greg Karczewski; J. Kossut; T. Wojtowicz

doi:10.1117/12.206859

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24 April 1995 Spin tracing: a tool of interface characterization in structures with semimagnetic semiconductors

Jan A. Gaj, P. Kossacki, Nguyen The Khoi, J. Cibert, W. Grieshaber, Y. Merle d'Aubigne, Greg Karczewski, J. Kossut, T. Wojtowicz

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Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206859
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

The principle of spin tracing is based on the exchange interaction between charge carriers and magnetic ions, which is known to produce giant magneto optical effects in Semimagnetic- or Diluted Magnetic Semiconductors. The idea of spin tracing is exploited in the Zeeman method of interface characterization to study spatial distribution of magnetic ions interacting with a carrier (exciton) confined in quantum structures made of ternary CdMnTe compounds. In this paper we give a concise description of the spin tracing method followed by a review of available experimental data related to the influence of interfaces on the Zeeman effect in structures with barriers containing magnetic ions. A critical review of strong and weak points of the method is given accompanied by a discussion of its practical applicability. Special attention is paid to studies of annealing processes of low dimensional structures using the Zeeman method. We analyze the results obtained so far on quantum wells and superlattices and discuss perspectives of further studies.

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Jan A. Gaj, P. Kossacki, Nguyen The Khoi, J. Cibert, W. Grieshaber, Y. Merle d'Aubigne, Greg Karczewski, J. Kossut, and T. Wojtowicz "Spin tracing: a tool of interface characterization in structures with semimagnetic semiconductors", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206859

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