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19 June 1995 Comprehensive numerical model for cw vertical-cavity surface-emitting lasers
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Abstract
We present a comprehensive numerical model for vertical-cavity surface-emitting lasers that includes all major processes effecting cw operation of axisymmetric devices. In particular, our model includes a description of the 2D transport of electrons and holes through the cladding layers to the quantum well(s), diffusion and recombination processes of these carriers within the wells, the 2D transport of heat throughout the device, and a multilateral-mode effective index optical model. The optical gain acquired by photons traversing the quantum wells is computed including the effects of strained band structure and quantum confinement. We employ our model to predict the behavior of higher-order lateral modes in proton-implanted devices, and to provide an understanding of index-guiding in devices fabricated using selective oxidation.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Ronald Hadley, Kevin L. Lear, Mial E. Warren, Kent D. Choquette, Jeff W. Scott, and Scott W. Corzine "Comprehensive numerical model for cw vertical-cavity surface-emitting lasers", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212511
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