Paper
19 June 1995 First-principles calculations for AlN, GaN, and InN: bulk and alloy properties
Alan F. Wright, Jeffrey S. Nelson
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Abstract
First-principles density-functional calculations utilizing ab initio pseudopotentials and plane- wave expansions are used to determine lattice parameters, bulk moduli, and band structures for AlN, GaN, and InN. It is found that large numbers of plane waves are necessary to resolve the nitrogen 2p wave functions and that explicit treatment of the gallium 3d and indium 4d electrons is important for an accurate description of GaN and InN. Several properties of ternary zinc-blende alloys are determined including their bond-length and bond-angle relaxation and their energy-gap bowing parameters. The similarity of the calculated zinc- blende and wurtzite direct gaps also allows estimates to be made of the energy gap versus composition for wurtzite alloys.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan F. Wright and Jeffrey S. Nelson "First-principles calculations for AlN, GaN, and InN: bulk and alloy properties", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212524
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Cited by 4 scholarly publications.
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KEYWORDS
Gallium nitride

Indium nitride

Electrons

Nitrogen

Indium

Semiconductors

Gallium

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