Negative differential gain in strained-layer InGaAs quantum well laser diodes

Petr Georgievich Eliseev; Aleksandr E. Drakin

doi:10.1117/12.212506

19 June 1995 Negative differential gain in strained-layer InGaAs quantum well laser diodes

Petr Georgievich Eliseev, Aleksandr E. Drakin

Proceedings Volume 2399, Physics and Simulation of Optoelectronic Devices III; (1995) https://doi.org/10.1117/12.212506
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Experimental evidences and modeling calculations are given for the existence of negative differential mode gain in ridge-waveguide laser diodes on the base of strained-layer InGaAs/GaAs quantum-well structures. The phenomenon is found to be related to a mode formation in an active 2D waveguide with monotonic increase of the material gain. The mode gain is calculated in single- and double-QW laser structures at various waveguide parameters including variation of the lateral built-in index step.

Citation Download Citation

Petr Georgievich Eliseev and Aleksandr E. Drakin "Negative differential gain in strained-layer InGaAs quantum well laser diodes", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212506

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