Novel design of semiconductor lasers for optical communication

Rudolf F. Kazarinov; Gregory L. Belenky

doi:10.1117/12.212515

19 June 1995 Novel design of semiconductor lasers for optical communication

Rudolf F. Kazarinov, Gregory L. Belenky

Proceedings Volume 2399, Physics and Simulation of Optoelectronic Devices III; (1995) https://doi.org/10.1117/12.212515
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

We propose a novel design of semiconductor lasers operating at 1.3 micrometers and 1.5 micrometers . A distinctive attribute of the proposed design is that the AlInGaAs active region is surrounded by an electron stopper layer on the p-side and a hole stopper layer on the n-side. The stopper layers do not impede the carrier injection into the active region and at the same time reduce the thermionic emission of carriers out of the active region. Utilization of stopper layers allows to increase the value of internal quantum efficiency and select the waveguide material corresponding to the optimum optical confinement factor value.

Citation Download Citation

Rudolf F. Kazarinov and Gregory L. Belenky "Novel design of semiconductor lasers for optical communication", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212515

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available