Parasitic effects in the period doubling of semiconductor lasers

Guillermo Carpintero; Horacio Lamela

doi:10.1117/12.212495

19 June 1995 Parasitic effects in the period doubling of semiconductor lasers

Proceedings Volume 2399, Physics and Simulation of Optoelectronic Devices III; (1995) https://doi.org/10.1117/12.212495
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

In this paper we study the behavior of a single mode semiconductor laser under strong signal modulation. To describe the semiconductor laser, we employed the standard rate equation model, commonly used for this type of analysis. A continuation method is used in order to study the evolution of the behavior of the laser as the modulation index is increased. The bifurcation points are determined using Floquet Theory. In order to introduce the parasitic effects, we have used the equivalent circuit model. First, the intrinsic model is used to verify the results obtained with the continuation method and after, we introduce the laser parasitics to obtain new results on the dynamic behavior.

Citation Download Citation

Guillermo Carpintero and Horacio Lamela "Parasitic effects in the period doubling of semiconductor lasers", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212495

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