Monte Carlo simulations of reactive pulsed laser deposition

Dale L. Capewell; David G. Goodwin

doi:10.1117/12.206271

10 April 1995 Monte Carlo simulations of reactive pulsed laser deposition

Dale L. Capewell, David G. Goodwin

Proceedings Volume 2403, Laser-Induced Thin Film Processing; (1995) https://doi.org/10.1117/12.206271
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

The Direct Simulation Monte Carlo (DSMC) method for simulating rarified gasdynamics has been applied to the problem of pulses laser deposition. Both 1D and 2D axisymmetric simulations were carried out. In both, a source of silicon expands into the background gas of argon in the presence of a diffusely reflecting substrate. Density, temperature, and axial flow velocity for each species are computed as functions of position and time. Particle flux and energy incident on the substrate are also monitored as functions of time. The simulation results are in good agreement with experimental plume diagnostics and film growth rates vs. pressure data.

Citation Download Citation

Dale L. Capewell and David G. Goodwin "Monte Carlo simulations of reactive pulsed laser deposition", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); https://doi.org/10.1117/12.206271

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