Realization of Si1-x-yGexCy/Si heterostructures by pulsed-laser-induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)

Jacques Boulmer; A. Desmur-Larre; C. Guedj; D. Debarre; Philippe Boucaud; Francois H. Julien; Elieser Finkman; Keith A. Nugent; R. Laval; J.-B. Ozenne; H. Yang; D. Bouchier; Christian Godet; Pere Roca i Cabarrocas; G. Calvarin; C. Clerc

doi:10.1117/12.206273

10 April 1995 Realization of Si_1-x-yGe_xC_y/Si heterostructures by pulsed-laser-induced epitaxy of C⁺ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)

Jacques Boulmer, A. Desmur-Larre, C. Guedj, D. Debarre, Philippe Boucaud, Francois H. Julien, Elieser Finkman, Keith A. Nugent, R. Laval, J.-B. Ozenne, H. Yang, D. Bouchier, Christian Godet, Pere Roca i Cabarrocas, G. Calvarin, C. Clerc

Author Affiliations +

Proceedings Volume 2403, Laser-Induced Thin Film Processing; (1995) https://doi.org/10.1117/12.206273
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Si_1-x-yGe_xC_y / Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C⁺ implanted pseudomorphic Si_{0.84/Ge(subscript 0.16} films and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channeling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy, X-ray diffraction and Raman spectroscopy. First results show that laser induced epitaxy is effective, provided that laser fluence exceeds a threshold for which the melted depth is larger than the initial SiGeC layer. In addition, carbon incorporation in substitutional sites is demonstrated.

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Jacques Boulmer, A. Desmur-Larre, C. Guedj, D. Debarre, Philippe Boucaud, Francois H. Julien, Elieser Finkman, Keith A. Nugent, R. Laval, J.-B. Ozenne, H. Yang, D. Bouchier, Christian Godet, Pere Roca i Cabarrocas, G. Calvarin, and C. Clerc "Realization of Si_1-x-yGe_xC_y/Si heterostructures by pulsed-laser-induced epitaxy of C⁺ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); https://doi.org/10.1117/12.206273

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