Dry resist material on base of perylene tetracarboxylic acid derivatives for laser lithography

Vladimir Enokovich Agabekov; Victor Adamovich Azarko; Olga Petrovna Nevdakh

doi:10.1117/12.210404

9 June 1995 Dry resist material on base of perylene tetracarboxylic acid derivatives for laser lithography

Vladimir Enokovich Agabekov, Victor Adamovich Azarko, Olga Petrovna Nevdakh

Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210404
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Vacuum vapor deposited films (0.8 - 1.2 micrometers thickness) of perylene-3,4,9,10- tetracarboxylic acid (PTA) derivatives studied permit masks to be produced by laser vacuum projection lithography (LVPL) technique. The masks have submicron elements (0.4 - 0.6 micrometers ) and selectivity ranging from 7 to 15 during plasma chemical etching of Si, SiO₂ and Al. Films based on diphenyl- and di-(p-chlorophenyl)-diimides possess the best lithographic and masking properties.

Citation Download Citation

Vladimir Enokovich Agabekov, Victor Adamovich Azarko, and Olga Petrovna Nevdakh "Dry resist material on base of perylene tetracarboxylic acid derivatives for laser lithography", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210404

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