Paper
9 June 1995 UV pretreatments for improved etching of organic antireflective coating (ARC) layer
Linda J. Insalaco, Vandana N. Krishnamurthy, John L. Sturtevant, James C. Mitchener
Author Affiliations +
Abstract
In this paper we present a technique utilizing intense UV exposure to alter the chemical properties of an organic antireflective material such that dry etch performance is improved. By monitoring the ARC thickness before and after UV exposure, it can be demonstrated that prolonged UV exposure coupled with a specific range of substrate temperatures can result in a dramatic reduction in ARC thickness. Similar measurements taken before and after ARC etch reveal an improvement in etch rate in ARC samples previously subjected to intense UV exposure. Changes in ARC structure and etch performance are presented as functions of UV wavelengths, substrate temperature, and exposure time.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Linda J. Insalaco, Vandana N. Krishnamurthy, John L. Sturtevant, and James C. Mitchener "UV pretreatments for improved etching of organic antireflective coating (ARC) layer", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210379
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KEYWORDS
Etching

Ultraviolet radiation

Semiconducting wafers

Antireflective coatings

Ultraviolet sources

Photoresist processing

Photoresist materials

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