SEM review of unpatterned particle monitor wafers

Scott Arsenault; Neal T. Sullivan

doi:10.1117/12.209198

22 May 1995 SEM review of unpatterned particle monitor wafers

Scott Arsenault, Neal T. Sullivan

Proceedings Volume 2439, Integrated Circuit Metrology, Inspection, and Process Control IX; (1995) https://doi.org/10.1117/12.209198
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

A method for effectively utilizing a Scanning Electron Microscope (SEM) for defect review and identification of unpatterned silicon particle wafers, following inspection on a laser-scanning defect inspection tool, is presented. The method involves prepatterning of bare silicon wafers at the extreme edges, typically less than 20 mm from the edge of a 200 mm wafer, using standard (I-Line) photolithographic processing. The registration marks created in this process are used for stage correlation between the SEM and laser-scanning wafer inspection tools. Use of these marks is demonstrated to result in a 50% improvement in particle location accuracy (mean + 2 sigma) over previously reported results. Further optimizations, including modeling and removal of systematic error sources through data transformations, demonstrate the additional improvements in particle location accuracy that are possible.

Citation Download Citation

Scott Arsenault and Neal T. Sullivan "SEM review of unpatterned particle monitor wafers", Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); https://doi.org/10.1117/12.209198

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