193-nm full-field step-and-scan prototype at MIT Lincoln Laboratory

Michael S. Hibbs; Roderick R. Kunz

doi:10.1117/12.209242

26 May 1995 193-nm full-field step-and-scan prototype at MIT Lincoln Laboratory

Michael S. Hibbs, Roderick R. Kunz

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209242
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Optical lithography at a 193-nm exposure wavelength has been under development at MIT Lincoln Laboratory for several years, supported by ARPA's Advanced Lithography Program. As part of this program, a prototype 193-nm full-field step-and-scan lithographic exposure system was built and installed in the clean-room facilities of MIT Lincoln Laboratory. This exposure system has now been in use for one year, supporting a program of photoresist and lithographic process development at 193 nm. This paper describes the characteristics of the exposure system and some of the advances in 193-nm lithography that have been achieved with the system.

Citation Download Citation

Michael S. Hibbs and Roderick R. Kunz "193-nm full-field step-and-scan prototype at MIT Lincoln Laboratory", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209242

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